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Citation Research Areas Publication Date
H. Lu, W. Li, Y. Lu, P. Fay, T. Ytterdal, and A. Seabaugh, "Universal charge-conserving TFET SPICE model incorporating gate current and noise" IEEE J. Explor. Solid-State Comput. Devices Circuit, pp. 1-1, Nov. 2016 Nov. 2016
W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay, "Polarization-engineered III-nitride heterojunction tunnel field-effect transistors" IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34, Jul. 2015 Jul. 2015
A. Seabaugh, S. Fathipour, W. Li, H. Lu, J. H. Park, A. Kummel, D. Jena, S. Fullerton-Shirey, and P. Fay, "Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels" 2015 Int. Electron Dev. Mtg., pp. 35.6, Jan. 2015 Jan. 2015
Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. G. Xing, "InAlN/AlN/GaN HEMTs with Regrown Ohmics and fT of 370 GHz" Electron Device Letters, vol. 33, pp. 988-990, Sep. 2012 Sep. 2012
R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, and A. Seabaugh, "AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V" IEEE Electron Device Lett., vol. 33, pp. 363-365, Mar. 2012 Mar. 2012
R. Li, Y. Lu, S. D. Chae, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, S. Koswatta, and A. Seabaugh, "InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field" Physica status solidi C, 9, no. 2, pp. 389-392, Mar. 2012 Mar. 2012
G. Zhou, Y. Lu, R. Li, Q. Zhang, W.S. Hwang, Q. Liu, T. Vasen, C. Chen, H. Zhu, H.; J.-M. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. G. Xing, "Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate" IEEE Electron Device Letters, vol. 32, no. 11, pp. 1516-1518, Nov. 2011 Nov. 2011
D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, "300-GHz InAlN/GaN HEMTs with InGaN Back Barrier" IEEE Electron Device Lett., vol. 32, no. 11, pp. 1525-1527, Nov. 2011 Nov. 2011
R. Wang, G. Li, O. Laboutin, Y.Cao, J. W. Johnson, G. Snider, P. Fay, D. Jena, and H.G. Xing, "220 GHz quaternary barrier InAIGAN/AIN/GaN HEMT," IEEE Electron Device Letters, vol. 32, pp. 1215-1217, Sep. 2011 Sep. 2011