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W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay, "Polarization-engineered III-nitride heterojunction tunnel field-effect transistors" IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34, Jul. 2015 Jul. 2015
P. Zhao, A. Verma, J. Verma, H. G. Xing, P. Fay, and D. Jena, "Heterostructure barrier diodes exploiting polarization-induced delta-doping" IEEE Electron Dev. Lett., 35(6), 615, Jun. 2014 Jun. 2014
Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. G. Xing, "InAlN/AlN/GaN HEMTs with Regrown Ohmics and fT of 370 GHz" Electron Device Letters, vol. 33, pp. 988-990, Sep. 2012 Sep. 2012
R. Li, Y. Lu, S. D. Chae, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, S. Koswatta, and A. Seabaugh, "InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field" Physica status solidi C, 9, no. 2, pp. 389-392, Mar. 2012 Mar. 2012
D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, "300-GHz InAlN/GaN HEMTs with InGaN Back Barrier" IEEE Electron Device Lett., vol. 32, no. 11, pp. 1525-1527, Nov. 2011 Nov. 2011
R. Wang, G. Li, O. Laboutin, Y.Cao, J. W. Johnson, G. Snider, P. Fay, D. Jena, and H.G. Xing, "220 GHz quaternary barrier InAIGAN/AIN/GaN HEMT," IEEE Electron Device Letters, vol. 32, pp. 1215-1217, Sep. 2011 Sep. 2011