Skip to content
Filters Heterojunctions
Citation Research Areas Publication Date
T. Ameen, H. Ilatikhameneh, P. Fay, A. Seabaugh, R. Rahman, and G. Klimeck, "Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs" IEEE Trans. Electron Dev., vol. 66, no. 1, pp. 736-742, Jan. 2019 Jan. 2019
W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay, "Polarization-engineered III-nitride heterojunction tunnel field-effect transistors" IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34, Jul. 2015 Jul. 2015
R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, and A. Seabaugh, "AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V" IEEE Electron Device Lett., vol. 33, pp. 363-365, Mar. 2012 Mar. 2012