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Citation Research Areas Publication Date
N. Estes, J. Chisum, "A 10MHz-1GHz Mitigated Shunt Capacitance Hybrid LNA for Use in a Ka-Band Envelope Detector Baseband Output" 2021 United States National Committee of URSI National Radio Science Meeting (USNC-URSI NRSM), Jan. 2021 Jan. 2021
Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. G. Xing, "InAlN/AlN/GaN HEMTs with Regrown Ohmics and fT of 370 GHz" Electron Device Letters, vol. 33, pp. 988-990, Sep. 2012 Sep. 2012
R. Li, Y. Lu, S. D. Chae, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, S. Koswatta, and A. Seabaugh, "InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field" Physica status solidi C, 9, no. 2, pp. 389-392, Mar. 2012 Mar. 2012
D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, "300-GHz InAlN/GaN HEMTs with InGaN Back Barrier" IEEE Electron Device Lett., vol. 32, no. 11, pp. 1525-1527, Nov. 2011 Nov. 2011
R. Wang, G. Li, O. Laboutin, Y.Cao, J. W. Johnson, G. Snider, P. Fay, D. Jena, and H.G. Xing, "220 GHz quaternary barrier InAIGAN/AIN/GaN HEMT," IEEE Electron Device Letters, vol. 32, pp. 1215-1217, Sep. 2011 Sep. 2011