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Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. G. Xing, "InAlN/AlN/GaN HEMTs with Regrown Ohmics and fT of 370 GHz" Electron Device Letters, vol. 33, pp. 988-990, Sep. 2012 Sep. 2012