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| Citation | Research Areas | Publication Date |
|---|---|---|
| P. Zhao, A. Verma, J. Verma, H. G. Xing, P. Fay, and D. Jena, "Heterostructure barrier diodes exploiting polarization-induced delta-doping" IEEE Electron Dev. Lett., 35(6), 615, Jun. 2014 | Jun. 2014 | |
| A. Seabaugh, S. Fathipour, W. Li, H. Lu, J. H. Park, A. Kummel, D. Jena, S. Fullerton-Shirey, and P. Fay, "Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels" 2015 Int. Electron Dev. Mtg., pp. 35.6, Jan. 2015 | Jan. 2015 | |
| W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay, "Polarization-engineered III-nitride heterojunction tunnel field-effect transistors" IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34, Jul. 2015 | Jul. 2015 |