Publication Library
| Citation | Research Areas | Publication Date |
|---|---|---|
| D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, "300-GHz InAlN/GaN HEMTs with InGaN Back Barrier" IEEE Electron Device Lett., vol. 32, no. 11, pp. 1525-1527, Nov. 2011 | Nov. 2011 |