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Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. G. Xing,
"InAlN/AlN/GaN HEMTs with Regrown Ohmics and fT of 370 GHz"
Electron Device Letters, vol. 33, pp. 988-990,
Sep. 2012 |
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Sep. 2012 |
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R. Li, Y. Lu, S. D. Chae, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, S. Koswatta, and A. Seabaugh,
"InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field"
Physica status solidi C, 9, no. 2, pp. 389-392,
Mar. 2012 |
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Mar. 2012 |
