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H. Lu, W. Li, Y. Lu, P. Fay, T. Ytterdal, and A. Seabaugh, "Universal charge-conserving TFET SPICE model incorporating gate current and noise" IEEE J. Explor. Solid-State Comput. Devices Circuit, pp. 1-1, Nov. 2016 Nov. 2016
W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay, "Polarization-engineered III-nitride heterojunction tunnel field-effect transistors" IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34, Jul. 2015 Jul. 2015
A. Seabaugh, S. Fathipour, W. Li, H. Lu, J. H. Park, A. Kummel, D. Jena, S. Fullerton-Shirey, and P. Fay, "Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels" 2015 Int. Electron Dev. Mtg., pp. 35.6, Jan. 2015 Jan. 2015
R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, and A. Seabaugh, "AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V" IEEE Electron Device Lett., vol. 33, pp. 363-365, Mar. 2012 Mar. 2012
G. Zhou, Y. Lu, R. Li, Q. Zhang, W.S. Hwang, Q. Liu, T. Vasen, C. Chen, H. Zhu, H.; J.-M. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. G. Xing, "Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate" IEEE Electron Device Letters, vol. 32, no. 11, pp. 1516-1518, Nov. 2011 Nov. 2011