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W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay, "Polarization-engineered III-nitride heterojunction tunnel field-effect transistors" IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34, Jul. 2015 Jul. 2015
R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, and A. Seabaugh, "AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V" IEEE Electron Device Lett., vol. 33, pp. 363-365, Mar. 2012 Mar. 2012