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| Citation | Research Areas | Publication Date |
|---|---|---|
| S. Dutta, B. Grisafe, C. Frentzel, Z. Enciso, M. San Jose, J. Smith, K. Ni, S. Joshi, S. Datta, "Experimental demonstration of gate-level logic camouflaging and run-time reconfigurability using ferroelectric FET for hardware security" IEEE Transactions on Electron Devices, Jan. 2021 | Jan. 2021 | |
| S. Dutta, W. Chakraborty, J. Gomez, K. Ni, S. Joshi, S. Datta, "Energy-efficient edge inference on multi-channel streaming data in 28nm HKMG FeFET technology" 2019 Symposium on VLSI Technology, Jun. 2019 | Jun. 2019 | |
| H. Lu, W. Li, Y. Lu, P. Fay, T. Ytterdal, and A. Seabaugh, "Universal charge-conserving TFET SPICE model incorporating gate current and noise" IEEE J. Explor. Solid-State Comput. Devices Circuit, pp. 1-1, Nov. 2016 | Nov. 2016 | |
| W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay, "Polarization-engineered III-nitride heterojunction tunnel field-effect transistors" IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34, Jul. 2015 | Jul. 2015 | |
| A. Seabaugh, S. Fathipour, W. Li, H. Lu, J. H. Park, A. Kummel, D. Jena, S. Fullerton-Shirey, and P. Fay, "Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels" 2015 Int. Electron Dev. Mtg., pp. 35.6, Jan. 2015 | Jan. 2015 | |
| Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. G. Xing, "InAlN/AlN/GaN HEMTs with Regrown Ohmics and fT of 370 GHz" Electron Device Letters, vol. 33, pp. 988-990, Sep. 2012 | Sep. 2012 | |
| R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, and A. Seabaugh, "AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V" IEEE Electron Device Lett., vol. 33, pp. 363-365, Mar. 2012 | Mar. 2012 | |
| R. Li, Y. Lu, S. D. Chae, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, S. Koswatta, and A. Seabaugh, "InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field" Physica status solidi C, 9, no. 2, pp. 389-392, Mar. 2012 | Mar. 2012 | |
| G. Zhou, Y. Lu, R. Li, Q. Zhang, W.S. Hwang, Q. Liu, T. Vasen, C. Chen, H. Zhu, H.; J.-M. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. G. Xing, "Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate" IEEE Electron Device Letters, vol. 32, no. 11, pp. 1516-1518, Nov. 2011 | Nov. 2011 | |
| D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios, "300-GHz InAlN/GaN HEMTs with InGaN Back Barrier" IEEE Electron Device Lett., vol. 32, no. 11, pp. 1525-1527, Nov. 2011 | Nov. 2011 | |
| R. Wang, G. Li, O. Laboutin, Y.Cao, J. W. Johnson, G. Snider, P. Fay, D. Jena, and H.G. Xing, "220 GHz quaternary barrier InAIGAN/AIN/GaN HEMT," IEEE Electron Device Letters, vol. 32, pp. 1215-1217, Sep. 2011 | Sep. 2011 |