Millimeter-Wave Measurement and Modeling of High-Speed Transistors

Principal Investigator: Dr. Fay, Department of Electrical Engineering

Project Summary: Wireless communication systems are increasingly turning to mm-wave frequencies in order to achieve the high-speed transmission needed in next-generation systems.  The use of these higher frequencies challenges the performance of power amplifiers, low-noise amplifiers, switches for reconfigurable RF systems, and filters, as well as the underlying electronic device technologies. This project includes measuring the transistor-level performance of candidate technologies (including DC measurement and high-frequency on-wafer small- and large-signal characterization) and developing models suitable for computer-aided circuit design of these transistors from the measured characteristics. Comparisons of different models (e.g. ASM-HEMT, Angelov, etc.) and their respective abilities to capture key device performance features, particularly with regard to suitability for high-efficiency power amplifiers, are included to evaluate the suitability of the models for different circuit applications.

Student’s Role: The student will also be instrumental in performing the measurements, extracting the model parameters for the selected transistor model, and comparing the model’s projected performance against the measured results. Preparing a design kit, including documenting the model’s strengths and weaknesses, is also included.