AlGaN/GaN high-electron-mobility transistors – ND Wireless Institute
Skip to content
C. Wu, H. Ye, B. Grisafe, S. Datta, and P. Fay, "Ferroelectric Polarization Switching Behavior of Hf0.5Zr0.5O2 Gate Dielectrics on Gallium Nitride High-Electron-MobilityTransistor Heterostructures" Physica Status Solidi A, pp. 1-6, Nov. 2019 Nov. 2019