|
R. Wang, G. Li, O. Laboutin, Y.Cao, J. W. Johnson, G. Snider, P. Fay, D. Jena, and H.G. Xing,
"220 GHz quaternary barrier InAIGAN/AIN/GaN HEMT,"
IEEE Electron Device Letters, vol. 32, pp. 1215-1217,
Sep. 2011 |
|
Sep. 2011 |
|
D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios,
"300-GHz InAlN/GaN HEMTs with InGaN Back Barrier"
IEEE Electron Device Lett., vol. 32, no. 11, pp. 1525-1527,
Nov. 2011 |
|
Nov. 2011 |
|
R. Li, Y. Lu, S. D. Chae, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, S. Koswatta, and A. Seabaugh,
"InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field"
Physica status solidi C, 9, no. 2, pp. 389-392,
Mar. 2012 |
|
Mar. 2012 |
|
Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. G. Xing,
"InAlN/AlN/GaN HEMTs with Regrown Ohmics and fT of 370 GHz"
Electron Device Letters, vol. 33, pp. 988-990,
Sep. 2012 |
|
Sep. 2012 |
