Photonic band gap – ND Wireless Institute
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T. Ameen, H. Ilatikhameneh, P. Fay, A. Seabaugh, R. Rahman, and G. Klimeck, "Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs" IEEE Trans. Electron Dev., vol. 66, no. 1, pp. 736-742, Jan. 2019 Jan. 2019 W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay, "Polarization-engineered III-nitride heterojunction tunnel field-effect transistors" IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34, Jul. 2015 Jul. 2015