Skip to content
Home
About
Research
People
News
Publications
Events
About
Research
People
News
Publications
Events
Search for:
Search
Search Close
R. Wang, G. Li, O. Laboutin, Y.Cao, J. W. Johnson, G. Snider,
P. Fay
, D. Jena, and H.G. Xing,
"
220 GHz quaternary barrier InAIGAN/AIN/GaN HEMT,
"
IEEE Electron Device Letters, vol. 32, pp. 1215-1217, Sep. 2011
Aluminum gallium nitride
Current measurement
Gallium nitride
HEMTs
Logic gates
MODFETs
Sep. 2011