Skip to content
Home
About
Research
People
News
Publications
Events
About
Research
People
News
Publications
Events
Search for:
Search
Search Close
D. S. Lee, X. Gao, S. Guo, D. Kopp,
P. Fay
, and T. Palacios,
"
300-GHz InAlN/GaN HEMTs with InGaN Back Barrier
"
IEEE Electron Device Lett., vol. 32, no. 11, pp. 1525-1527, Nov. 2011
Aluminum gallium nitride
Delay
Gallium nitride
HEMTs
Logic gates
MODFETs
Nov. 2011