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P. Zhao, A. Verma, J. Verma, H. G. Xing,
P. Fay
, and D. Jena,
"
Heterostructure barrier diodes exploiting polarization-induced delta-doping
"
IEEE Electron Dev. Lett., 35(6), 615, Jun. 2014
Aluminum gallium nitride
Capacitance
Detectors
Doping
Gallium arsenide
Gallium nitride
Schottky diodes
Jun. 2014