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R. Wang, G. Li, G. Karbasian, J. Guo, F. Faria, Z. Hu, Y. Yue, J. Verma, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. G. Xing, "InGaN channel high electron mobility transistors with InAlGaN barrier and ft/fmax of 260/220 GHz" Applied Physics Exp., vol. 6, Dec. 2012 Dec. 2012