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W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay,
"Polarization-engineered III-nitride heterojunction tunnel field-effect transistors"
IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34,
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Jul. 2015 |
