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Citation | Research Areas | Publication Date |
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R. Wang, G. Li, O. Laboutin, Y.Cao, J. W. Johnson, G. Snider, P. Fay, D. Jena, and H.G. Xing, "220 GHz quaternary barrier InAIGAN/AIN/GaN HEMT," IEEE Electron Device Letters, vol. 32, pp. 1215-1217, Sep. 2011 | Sep. 2011 | |
R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, and A. Seabaugh, "AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V" IEEE Electron Device Lett., vol. 33, pp. 363-365, Mar. 2012 | Mar. 2012 |