H. Lu, W. Li, Y. Lu, P. Fay, T. Ytterdal, and A. Seabaugh,
"Universal charge-conserving TFET SPICE model incorporating gate current and noise"
IEEE J. Explor. Solid-State Comput. Devices Circuit, pp. 1-1,
Nov. 2016 |
|
Nov. 2016 |
W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay,
"Polarization-engineered III-nitride heterojunction tunnel field-effect transistors"
IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34,
Jul. 2015 |
|
Jul. 2015 |
A. Seabaugh, S. Fathipour, W. Li, H. Lu, J. H. Park, A. Kummel, D. Jena, S. Fullerton-Shirey, and P. Fay,
"Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels"
2015 Int. Electron Dev. Mtg., pp. 35.6,
Jan. 2015 |
|
Jan. 2015 |
R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, and A. Seabaugh,
"AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V"
IEEE Electron Device Lett., vol. 33, pp. 363-365,
Mar. 2012 |
|
Mar. 2012 |
G. Zhou, Y. Lu, R. Li, Q. Zhang, W.S. Hwang, Q. Liu, T. Vasen, C. Chen, H. Zhu, H.; J.-M. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. G. Xing,
"Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate"
IEEE Electron Device Letters, vol. 32, no. 11, pp. 1516-1518,
Nov. 2011 |
|
Nov. 2011 |