R. Wang, G. Li, O. Laboutin, Y.Cao, J. W. Johnson, G. Snider, P. Fay, D. Jena, and H.G. Xing,
"220 GHz quaternary barrier InAIGAN/AIN/GaN HEMT,"
IEEE Electron Device Letters, vol. 32, pp. 1215-1217,
Sep. 2011 |
|
Sep. 2011 |
D. S. Lee, X. Gao, S. Guo, D. Kopp, P. Fay, and T. Palacios,
"300-GHz InAlN/GaN HEMTs with InGaN Back Barrier"
IEEE Electron Device Lett., vol. 32, no. 11, pp. 1525-1527,
Nov. 2011 |
|
Nov. 2011 |
G. Zhou, Y. Lu, R. Li, Q. Zhang, W.S. Hwang, Q. Liu, T. Vasen, C. Chen, H. Zhu, H.; J.-M. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. G. Xing,
"Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate"
IEEE Electron Device Letters, vol. 32, no. 11, pp. 1516-1518,
Nov. 2011 |
|
Nov. 2011 |
R. Li, Y. Lu, S. D. Chae, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, S. Koswatta, and A. Seabaugh,
"InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field"
Physica status solidi C, 9, no. 2, pp. 389-392,
Mar. 2012 |
|
Mar. 2012 |
R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, and A. Seabaugh,
"AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V"
IEEE Electron Device Lett., vol. 33, pp. 363-365,
Mar. 2012 |
|
Mar. 2012 |
Y. Yue, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. G. Xing,
"InAlN/AlN/GaN HEMTs with Regrown Ohmics and fT of 370 GHz"
Electron Device Letters, vol. 33, pp. 988-990,
Sep. 2012 |
|
Sep. 2012 |
A. Seabaugh, S. Fathipour, W. Li, H. Lu, J. H. Park, A. Kummel, D. Jena, S. Fullerton-Shirey, and P. Fay,
"Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels"
2015 Int. Electron Dev. Mtg., pp. 35.6,
Jan. 2015 |
|
Jan. 2015 |
W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay,
"Polarization-engineered III-nitride heterojunction tunnel field-effect transistors"
IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34,
Jul. 2015 |
|
Jul. 2015 |
H. Lu, W. Li, Y. Lu, P. Fay, T. Ytterdal, and A. Seabaugh,
"Universal charge-conserving TFET SPICE model incorporating gate current and noise"
IEEE J. Explor. Solid-State Comput. Devices Circuit, pp. 1-1,
Nov. 2016 |
|
Nov. 2016 |
|
Jun. 2019 |
S. Dutta, B. Grisafe, C. Frentzel, Z. Enciso, M. San Jose, J. Smith, K. Ni, S. Joshi, S. Datta,
"Experimental demonstration of gate-level logic camouflaging and run-time reconfigurability using ferroelectric FET for hardware security"
IEEE Transactions on Electron Devices,
Jan. 2021 |
|
Jan. 2021 |