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Citation | Research Areas | Publication Date |
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R. Li, Y. Lu, S. D. Chae, G. Zhou, Q. Liu, C. Chen, M. S. Rahman, T. Vasen, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, S. Koswatta, and A. Seabaugh, "InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field" Physica Status Solidi., Nov. 2011 | Nov. 2011 | |
G. Zhou, Y. Lu, R. Li, Q. Zhang, W.S. Hwang, Q. Liu, T. Vasen, C. Chen, H. Zhu, H.; J.-M. Kuo, S. Koswatta, T. Kosel, M. Wistey, P. Fay, A. Seabaugh, H. G. Xing, "Vertical InGaAs/InP tunnel FETs with tunneling normal to the gate" IEEE Electron Device Letters, vol. 32, no. 11, pp. 1516-1518, Nov. 2011 | Nov. 2011 | |
R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, and A. Seabaugh, "AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V" IEEE Electron Device Lett., vol. 33, pp. 363-365, Mar. 2012 | Mar. 2012 | |
A. Seabaugh, S. Fathipour, W. Li, H. Lu, J. H. Park, A. Kummel, D. Jena, S. Fullerton-Shirey, and P. Fay, "Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels" 2015 Int. Electron Dev. Mtg., pp. 35.6, Jan. 2015 | Jan. 2015 | |
W. Li, S. Sharmin, H. Ilatikhameneh, R. Rahman, Y. Lu, J. Wang, X. Yan, A. Seabaugh, G. Klimeck, D. Jena, and P. Fay, "Polarization-engineered III-nitride heterojunction tunnel field-effect transistors" IEEE J. Explor. Solid-State Comput. Devices Circuits, vol. 1, pp. 28-34, Jul. 2015 | Jul. 2015 | |
H. Lu, W. Li, Y. Lu, P. Fay, T. Ytterdal, and A. Seabaugh, "Universal charge-conserving TFET SPICE model incorporating gate current and noise" IEEE J. Explor. Solid-State Comput. Devices Circuit, pp. 1-1, Nov. 2016 | Nov. 2016 | |
T. Ameen, H. Ilatikhameneh, P. Fay, A. Seabaugh, R. Rahman, and G. Klimeck, "Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs" IEEE Trans. Electron Dev., vol. 66, no. 1, pp. 736-742, Jan. 2019 | Jan. 2019 |