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Citation | Research Areas | Publication Date |
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A. Seabaugh, S. Fathipour, W. Li, H. Lu, J. H. Park, A. Kummel, D. Jena, S. Fullerton-Shirey, and P. Fay, "Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels" 2015 Int. Electron Dev. Mtg., pp. 35.6, Jan. 2015 | Jan. 2015 |