Resistance – ND Wireless Institute
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R. Li, Y. Lu, G. Zhou, Q. Liu, S. D. Chae, T. Vasen, W. S. Hwang, Q. Zhang, P. Fay, T. Kosel, M. Wistey, H. G. Xing, and A. Seabaugh, "AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μA/μm at 0.5 V" IEEE Electron Device Lett., vol. 33, pp. 363-365, Mar. 2012 Mar. 2012